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Electrical and switching properties of ZnIn2Se4 amorphous thin films

Laila I. Soliman ; Solid State Physics Lab., National Research Center, Dokki, Cairo, Egypt
Hamdia A. Zayed ; University College for Girls, Ain Shams University, Physics Department Heliopolis, Cairo, Egypt

Sažetak

In this work electrical and switching properties of amorphous ZnIn2Se4 thin films have been studied. The amorphous films were obtained by thermal evaporation in vacuum, of polycrystalline materials, on glass or pyrographite substrates. From electrical measurements, it was found that for all films the dark electrical resistivity decreases with an increase of film thickness and temperature. The ZnIn2Se4 films exhibit nonlinear I-V characteristics and switching phenomena. The threshold voltage decreases with increasing temperature and increases with increasing film thickness.

Ključne riječi

Hrčak ID:

299618

URI

https://hrcak.srce.hr/299618

Datum izdavanja:

1.10.1996.

Podaci na drugim jezicima: hrvatski

Posjeta: 531 *