Izvorni znanstveni članak
Optical and electrical properties of bismuth-sulfide (Bi2S3) thin films prepared by thermal evaporation
Siham Mahmoud
; Faculty of Science, Suez Canal University Physics Department, National Research Center, Dokki, Cairo, Egypt
Fouad Sharaf
; Faculty of Science, Suez Canal University Physics Department, National Research Center, Dokki, Cairo, Egypt
Sažetak
Thin films of Bi2S3, of thickness in the range 300 to 500 nm, were produced by thermal evaporation technique. The reaction consisted in depositing the two elements (bismuth and sulfur) from a boat source and allowing their atoms to interdiffuse to form the compound during the deposition on quartz substrates. The material has been characterized by X-ray studies, optical and electrical measurements. When these films were annealed at 353 K, 393 K and 453 K for 5 hours, a nearly amorphous to polycrystalline transition was observed. The absorption coefficient revealed the existence of an allowed direct transition with Eg = 1.56 eV. The activation energies for electrical conduction in low and high temperature regions are 0.28 eV and 0.73 eV, respectively.
Ključne riječi
Hrčak ID:
299619
URI
Datum izdavanja:
1.10.1996.
Posjeta: 233 *