Izvorni znanstveni članak
Effect of annealing on the switching properties of CuInSeTe thin films
L. I. Soliman
; National Research Centre, Solid State Physics Department, Dokki, Cairo, Egypt
T. A. Hendia
; National Research Centre, Solid State Physics Department, Dokki, Cairo, Egypt
H. A. Zayed
; University College for Art, Scince and Education, Ain Shams University, Cairo, Egypt
Sažetak
The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.
Ključne riječi
amorphous CuInSeTe thin film; annealing; switching characteristics; threshold voltage; threshold activation energy
Hrčak ID:
302228
URI
Datum izdavanja:
1.3.2007.
Posjeta: 184 *