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Structural disorder and its effects in laser wavelength GaAs–AlxGa1−xAs superlattice

R. Djelti ; Laboratoire de valorisation des matériaux, Département de physique, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algérie
S. Bentata ; Laboratoire de valorisation des matériaux, Département de physique, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algérie
Z. Aziz ; Laboratoire de valorisation des matériaux, Département de physique, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algérie
A. Besbes ; Laboratoire de valorisation des matériaux, Département de physique, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algérie

Sažetak

This study focuses on optically active system GaAs–AlxGa1−xAs based on the GaAs substrate, with the aim to achieve lasers emitting in a wide range of infrared (9 to 90 µm). The effect of aluminium concentration “x” and the potential well width “a” is studied to see their direct effects on the laser wavelength. We show from measurements of transmission that the introduction of a structural disorder (preserving the system periodicity) by doublet or triplet within our superlattices provides delocalised electronic states characterized by a probability of transmission equal to 1, meaning that the corresponding state is resonant.

Ključne riječi

superlattices (SL); transmission coefficient; structural disorder; laser wave lenght; infrared (IR)

Hrčak ID:

302718

URI

https://hrcak.srce.hr/302718

Datum izdavanja:

3.5.2009.

Podaci na drugim jezicima: francuski hrvatski

Posjeta: 621 *