Izvorni znanstveni članak

Annealing studies of vapour quenched Al-Sn films

E. Babić ; Institute of Physics of the University, Zagreb
R. Krsnik ; Institute of Physics of the University, Zagreb
D. Kunstelj ; Institute of Physics of the University, Zagreb
B. Leontić ; Institute of Physics of the University, Zagreb
M. Miljak ; Institute of Physics of the University, Zagreb
I. Zorić ; Institute of Physics of the University, Zagreb

Sažetak

Mestable solid solutions of Al+ up to 5% at. Sn have been obtained by means of “vapour quenching” in vacuum. The morphology and kinetics of structural changes have been observed by electrical resistance measurements and electron microscopy investigations. The “as deposited” thin films are found to be single phase solid solutions with an f. c. c. structure, while after annealing above 500 K they transform into a two phase structure where Al and Sn are separated. The activation energy for this process is found to be (1.45 ± 0.15) eV. The influence of the Sn impurity and defects on the electric resistance has been observed in the temperature interval of 250-350 K.

Ključne riječi

electron microscopy; Al-Sn films

Hrčak ID:

321500

URI

https://hrcak.srce.hr/321500

Datum izdavanja:

26.8.1971.

Podaci na drugim jezicima: hrvatski

Posjeta: 66 *