Original scientific paper

Space charge limited conduction in vacuum deposited Sb2S3 films

Khairy A. Mady ; Physics Department, National Research Centre, Dokki, Cairo, Egypt
Mahmoud M. El-Nahas ; Faculty of Education, Ain Shams University, Heliopolis, Cairo, Egypt
Abd-El-Monem A. Gabr ; Faculty of Science, Cairo University, Cairo, Egypt

Abstract

Antimony trisulphide films were prepared by conventional thermal evaporation technique. The temperature dependence of resistivity for films prepared at substrate temperatures 60°C < Ts < 100°C indicated stoichiometric uniformity. Dielectric and I-V characteristics studies were undertaken. The dielectric constant was evaluated to be 14.8 for thick films and remains invariant down to 90 nm thick films and is frequency-independent in the audiofrequency range. The I-V characteristics of Au-Sb2S3-Au systems showed a space charge limited conduction indicating that I ~ V2/L3, where L is the electrode spacing. The trap density and the trap energy level were found to be 3.52 · 1016 cm-3 and 0.72 eV, respectively.

Keywords

Hrčak ID:

331154

URI

https://hrcak.srce.hr/331154

Publication date:

2.2.1987.

Article data in other languages: croatian

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