Original scientific paper
Anomalous properties of n-InSe/n-ZnTe (thin film) heterojunction*
Natko Urli
; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Mirjana Peršin
; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Stanko Popović
; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Mladen Kranjčec
; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Branko Pivac
; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Abstract
D. C. current-voltage characteristics of the n-InSe/p-ZnTe heterojunction have been measured in the dark at different temperatures. The model of long-time relaxation and frozen conductivity has been applied in order to explain the anomalous behaviour of forward bias current as a function of temperature.
Keywords
Hrčak ID:
331183
URI
Publication date:
6.4.1987.
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