Original scientific paper
Effect of deviations of the current vectors from (100) axis of n-types silicon by different angles on the magnetoresistance at 300 K
Mohamed S. Zaghloul
; Dept. of Physics, Faculty of Science, Al Azhar University, Nasr City, Cairo, Egypt
Abstract
The transverse magnetoresistance (TMR) was measured as a function of rotational angle θ between the directions of both magnetic field (B) and current (I) at several values of B in n-type silicon crystals with carrier concentration of 1016 cm-3 at 300 K. The orientation of the samples are chosen so that the angles (φn) among the current vectors and (100) crystallographc axis are 10°, 30° and 40°, respectively. These measurements were done under in low electric and magnetic fields. Many types of anomalous effects of TMR were observed at the two opposite directions of B. Sharp variations in anomalous TMR with different intensities were found when φ(100) = 10°. Also the negative effects of θ - Δq/q0 relationships were detected at low B, but as B increases the negative MR vanishes. This shows that the anomalous and negative behaviours of TMR are strongly dependent upon the value of deviation angle of current from (100) axis of symmetry. The experimental data are illustrated and the results are discussed.
Keywords
Hrčak ID:
332032
URI
Publication date:
10.9.1991.
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