Short communication, Note

The Floating-Zone Refining of Silicon by Electron Beam Heating

Z. Ban ; Department of Structural and Ino-r ganic Chemistry, Institute »Ri:aer Bo!ikovic«, Zagreb, Croatia, Yugoslavia
M. Sikirica ; Department of Structural and Ino-r ganic Chemistry, Institute »Ri:aer Bo!ikovic«, Zagreb, Croatia, Yugoslavia

Abstract

The contamination o.f a melt c aused by the material of the container is
completely avoided by the float ing zoine method. For this reason the' method, firstly realized by P. H. Keck and M. J. Golay1, is nowadays u sed very oft~n for obtaining various materials of extremely high purity. The method is especially valuable in the case of chemically active melts and certainly it is the best way for obtaining single c rystals when extreme purity is primarily required. Zone melting can be achieved by different heating techniques, high frequency being used mostly. Electron beam heating wais introduced by A. Calverley et al.2 Ln the case o f ma•terials with very high melting point it has the advantage over high frequency heating. In the present article an improvement
of this method as well as details of the equipment and floating zone refining of silicon are described.

Keywords

Hrčak ID:

208397

URI

https://hrcak.srce.hr/208397

Publication date:

25.11.1962.

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