Original scientific paper
On a simple analysis of the Burstein-Moss shift in quantum confined structures of ternary and quaternary compounds
Khamakhya Prasad Ghatak
; Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta, India
Manabendra Mondal
; Department of Physics, Y. S. Palpara College, Post-Palpara, Dist. Midnapore, India
Abstract
In this paper an attempt is made to study the Burstein-Moss shift in quantum wires and quantum dots of ternary and quaternary compounds on the basis of three-band Kane model, taking into account the influence of warped energy surface of the heavy hole band. It is found, taking n-Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples, that the Burstein-Moss shift exhibits oscillations of non-ideal Heaviside step functions for quantum wires and quantum dots with respect to doping and film thickness, respectively. Besides, the three-band Kane model enhances the Burstein-Moss shift and the numerical values of the shift are greatest in quantum dots for both compounds. In addition, the corresponding results for two-band Kane model and that of wide band-gap materials have also been obtained as special cases of our generalized analysis under certain limiting conditions.
Keywords
Hrčak ID:
299307
URI
Publication date:
1.4.1992.
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