Original scientific paper

EPR study of hydrogen-rich silicon oxynitride films

Branko Pivac ; R. Bošković Institute, P.O. Box 1016, HR-41000 Zagreb, Croatia
Boris Rakvin ; R. Bošković Institute, P.O. Box 1016, HR-41000 Zagreb, Croatia
Alessandro Borghesi ; Dipartimento di Fisica, Universitá degli Studi, I-41100 Modena, Italy
Adele Sassella ; Dipartimento di Fisica Ä. Volta, Universitá degli Studi, I-27100 Pavia, Italy

Abstract

We studied hydrogen rich silicon oxynitrides deposited from nitrous oxide and silane gas mixture by a plasma enhanced chemical vapour deposition apparatus on single crystal silicon substrates. Annealing study showed that hydrogen outdiffusion depends on the film composition and is particularly retarded for oxygen content x = 1.4. EPR analysis demonstrated that this film contains the highest concentration of D centres. However, the maximum concentration of charged dangling bond-like centres does not coincide with D centres. Therefore, we conclude that D centres act as hydrogen traps and are responsible for the peculiar hydrogen behaviour observed in the studied films.

Keywords

Hrčak ID:

299472

URI

https://hrcak.srce.hr/299472

Publication date:

2.5.1995.

Article data in other languages: croatian

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