Original scientific paper

Investigation of reactively sputtered NbN films

Ivan Hotovy ; Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jozef Brcka ; Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jozef Huran ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9, 842 39 Bratislava, Slovakia

Abstract

We have investigated the structural properties of thin films of reactively magnetron sputtered niobium nitride (NbN) under high-temperature annealing (with annealing temperatures ranging 850 to 950 ° C) and with different nitrogen contents in the working gas mixture. Prepared NbN films were characterized by Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The influence of rapid thermal annealing (RTA) on a change of the structure properties and surface morphology was investigated. The correlation between technological parameters and film properties, structure and composition were established.

Keywords

Hrčak ID:

299488

URI

https://hrcak.srce.hr/299488

Publication date:

2.5.1995.

Article data in other languages: croatian

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