Original scientific paper

Ir-Al bimetallic Schottky contact systems on GaAs

Tibor Lalinský ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
Josef Osvald ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
Zelimira Mozolová ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
Josef Šišolak ; Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
George Constantinidis ; FORTH, Institute of Electronic Structure & Laser, P.O.Box 1527, 711 10 Heraklion, Crete, Greece

Abstract

We report on novel Ir-Al/GaAs Schottky contact systems based on sequentially evaporated Ir-Al bimetallic multilayers. Electrical and thermal stability of these contact systems are investigated by I- V measurements and Auger depth profiling method. An increase of the barrier height with annealing temperature has been indicated for all Schottky contacts. A model of the barrier height enhancement based on a solid phase epitaxy of a graded AlxGa1-xAs layer at the interface at elevated temperatures was used to explain the electrical and the thermal stability of the contacts. A method of controlling of the barrier height and of the thermal stability of the Ir-Al/n-GaAs interface is proposed.

Keywords

Hrčak ID:

299500

URI

https://hrcak.srce.hr/299500

Publication date:

2.5.1995.

Article data in other languages: croatian

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