Original scientific paper

Phonon conduction in heavily dopped N-type silicon

M. K. Roy ; Department of Physics, University of Chittagong, Chittagong, Bangladesh
M. Hoque ; Department of Physics, University of Chittagong, Chittagong, Bangladesh

Abstract

In n-type semiconductors, if the donor concentration Nex > Nc, the critical concentration of donors, the sample becomes metal. The expression for electron–phonon relaxation rate in such semiconductors in the self-consistent method derived by T. Sota and K. Suzuki, modified in the recent paper of M. K. Roy, is used to take into account a realistic picture of the scattered phonons in heavily doped n-type silicon. Angular average of the deformation potential for different polarization vectors λ obtained by introducing spherical polar coordinates has been used. Finally, we have calculated phonon conductivity K for As- and P-doped silicon with Nex > Nc. Good agreement with the experimental result of M. E. Brinson and W. Dunstan has been obtained.

Keywords

electron-phonon interaction; phonon conductivity; semiconductors

Hrčak ID:

301647

URI

https://hrcak.srce.hr/301647

Publication date:

1.10.2003.

Article data in other languages: croatian

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