Original scientific paper
Iron in silicon and its relation to thermal defects*
Miodrag Stojić
; Boris Kidrič Institute of Nuclear S.ciences, 11000 Belgrade, Yugosiavia
Abstract
The behaviour of iron in quenched silicon single-crystals and its relation to thermal defects have been studied by radioactive tracer method and ESR-spectroscopy. It was established that diffusion of iron in silicon occurs via an interstitial mechanism. During the quenching the dissolved iron interstitials easily precipitate on specimens surfaces and more effectively on dislocations, the process which strongly -influences the diffusion profile of iron. As experimental results showed a certain quantity of iron interstitials is associated with thermal defects i. e. with self-interstitials making the (Fe1 - ISi) pairs regarded as the origin of further growing of micro-defects earlier observed in quenched silicon by TEM.
Keywords
Hrčak ID:
328932
URI
Publication date:
5.12.1983.
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