Original scientific paper
On the Einstein relation in quantum well wires of A113BV2 semiconductors
Manabendra Mondal
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Cakutta-700 009, India
Nalinakhya Chattopadhyay
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Cakutta-700 009, India
Kamakhya P. Ghatak
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Cakutta-700 009, India
Abstract
An attempt is made to investigate the Einstein relation for the diffusivity-mobility ratio of the carriers in quantum well wires of A113BV2 semiconductors, taking n-Cd3P2 as an example. On the basis of a newly derived E - kz dirpersion relation of the carriers, which includes various types of anisotropies in the energy spectrum, it is found that the above ratio increase with increasing electron concentration. In addition, the corresponding results of parabolic semiconductors are also obtained from the expressions derived.
Keywords
Hrčak ID:
331440
URI
Publication date:
5.7.1988.
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