Original scientific paper

Electronic properties of molten CuSbTe2

Karima A. Sharaf ; Physics Department, Faculty of Science, (Girls Branch) Al-Azhar University, Nasr City, Cairo, Egypt
Nadia Abdelmohsen ; Physics Department, Faculty of Science, (Girls Branch) Al-Azhar University, Nasr City, Cairo, Egypt
Sozan Naser ; Physics Department, Faculty of Science, (Girls Branch) Al-Azhar University, Nasr City, Cairo, Egypt
Abde-Fatah H. Abou El-Ela ; Physics Department, Faculty of Science, (Girls Branch) Al-Azhar University, Nasr City, Cairo, Egypt

Abstract

The electrical conductivity and thermoelectric power of CuSbTe have been measured both in the solid and liquid states. The observed conductivity values of this compound just above its respective melting points and increase with increasing temperature. The contact method was used in our investigations. The experimental data were explained on the basis of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott). The data for CuSbTe2 were fitted to the model with Ed = 0.035 eV and E0 = 0.11 eV in solid state and liquid state. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.

Keywords

Hrčak ID:

332042

URI

https://hrcak.srce.hr/332042

Publication date:

2.12.1991.

Article data in other languages: croatian

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