Original scientific paper

https://doi.org/10.7305/automatika.53-2.177

Wide Band Gap Semiconductor Devices for Power Electronics

José Millán ; Centro Nacional de Microelectrónica, CNM, Instituto de Microelectrónica de Barcelona, IMB, CSIC, Campus UAB, Spain
Philippe Godignon ; Centro Nacional de Microelectrónica, CNM, Instituto de Microelectrónica de Barcelona, IMB, CSIC, Campus UAB, Spain
Amador Pérez-Tomás ; Centro Nacional de Microelectrónica, CNM, Instituto de Microelectrónica de Barcelona, IMB, CSIC, Campus UAB, Spain

Abstract

It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed.

Keywords

SiC; GaN; Power devices; Rectifiers; MOSFETs; HEMTs

Hrčak ID:

84008

URI

https://hrcak.srce.hr/84008

Publication date:

1.6.2012.

Article data in other languages: croatian

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