Original scientific paper
https://doi.org/10.5599/jese.278
Oxygen source-oriented control of atmospheric pressure chemical vapor deposition of VO2 for capacitive applications
Dimitra Vernardou
; Center of Materials Technology and Photonics, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
Antonia Bei
; Department of Mechanical Engineering, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
Dimitris Louloudakis
; Center of Materials Technology and Photonics, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
Nikolaos Katsarakis
; Center of Materials Technology and Photonics, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
Emmanouil Koudoumas
; Center of Materials Technology and Photonics, School of Engineering, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
Abstract
Vanadium dioxides of different crystalline orientation planes have successfully been fabricated by chemical vapor deposition at atmospheric pressure using propanol, etha-nol and O2 gas as oxygen sources. The thick a-axis textured monoclinic vanadium dioxide obtained through propanol presented the best electrochemical response in terms of the highest specific discharge capacity of 459 mAh g-1 with a capacitance retention of 97 % after 1000 scans under constant specific current of 2 A g-1.
Keywords
Atmospheric pressure chemical vapor deposition; O2 source; Vanadium dioxide; Electrochemical properties
Hrčak ID:
159653
URI
Publication date:
9.6.2016.
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