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Journal of Electrochemical Science and Engineering, Vol. 7 No. 2, 2017.

Original scientific paper

https://doi.org/10.5599/jese.377

Voltammetric growth of tin oxides in borate solution of pH 8.7

Tiago Brandão Costa orcid id orcid.org/0000-0003-3028-7965 ; Programa de Pós-Graduação em Engenharia Metalúrgica (PPGEM), Escola de Engenharia Industrial Metalúrgica de Volta Redonda (EEIMVR), Universidade Federal Fluminense (UFF), 27255-125 Volta Redonda, RJ, Brazil
Tania Maria Cavalcanti Nogueira ; Programa de Pós-Graduação em Engenharia Metalúrgica (PPGEM), Escola de Engenharia Industrial Metalúrgica de Volta Redonda (EEIMVR), Universidade Federal Fluminense (UFF), 27255-125 Volta Redonda, RJ, Brazil
Ladário da Silva ; Programa de Pós-Graduação em Engenharia Metalúrgica (PPGEM), Escola de Engenharia Industrial Metalúrgica de Volta Redonda (EEIMVR), Universidade Federal Fluminense (UFF), 27255-125 Volta Redonda, RJ, Brazil

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Abstract

Voltammetry has been employed to study the growth of tin oxides in buffer solution of 0.3 mol L-1 H3BO3 + 0.15 mol L-1 Na2B4O7·10H2O (pH 8.7). Voltammetric data were compared with the results of tin in a phosphate solution of pH 8.7, presented in the previous work, in order to study the influence of these anions on the growth of tin oxides. The thicknesses of grown oxides were determined using ex-situ ellipsometric technique and the volume per charge unity of the film, Vf, was calculated for different charge densities of the film. The results showed that less dense films were obtained at higher sweep rates. Tin oxide films grown in phosphate solution at 2 mV s-1 were denser than those grown in borate solution at the same sweep rate. The kinetic parameters, determined applying the ohmic model, showed that there are no significant differences between the kinetics at the metal/film interface of tin in borate and tin in phosphate solutions. Despite these facts, the ionic specific resistivity for oxide film growth in borate solution were significantly higher than in phosphate solution. This result indicates that incorporation of anions occurs during the growth of the films.

Keywords

ellipsometry; tin passivation; ohmic model; voltammetry; variable ionic resistivity

Hrčak ID:

183518

URI

https://hrcak.srce.hr/183518

Publication date:

28.6.2017.

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