Croatica Chemica Acta, Vol. 90 No. 2, 2017.
Original scientific paper
https://doi.org/10.5562/cca3149
Enhanced Oxidation of Nickel at Room Temperature by Low-energy Oxygen Implantation
Robert Peter
; Department of Physics and Center for Micro- and Nanosciences and Technologies, University of Rijeka, R. Matejčić 2, HR-51000 Rijeka, Croatia
Iva Šarić
; Department of Physics and Center for Micro- and Nanosciences and Technologies, University of Rijeka, R. Matejčić 2, HR-51000 Rijeka, Croatia
Mladen Petravić
; Department of Physics and Center for Micro- and Nanosciences and Technologies, University of Rijeka, R. Matejčić 2, HR-51000 Rijeka, Croatia
Abstract
The formation of oxide films on pure Ni surfaces by low energy oxygen ion-beam bombardment at room temperature was studied by X-ray photoelectron spectroscopy. Ion-induced oxidation is more efficient in creating thin NiO films on Ni surfaces than oxidation in oxygen atmosphere. The oxide thickness of bombarded samples is related to the penetration depth of oxygen ions in Ni and scales with the dose of implanted oxygen, Φ, as Φ1/6. This type of oxide growth is predicted theoretically for diffusion of Ni cations by doubly charged cation vacancies, which creation and mobility is greatly enhanced by ion-irradiation.
This work is licensed under a Creative Commons Attribution 4.0 International License.
Keywords
oxidation of Ni; XPS; ion-beam bombardment; parabolic growth rate; oxygen implantation; NiO; oxidation in oxygen atmosphere
Hrčak ID:
184788
URI
Publication date:
3.7.2017.
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