Izvorni znanstveni članak
Study of defects in p-type silicon implanted with channeled low energy phosphorous ions
B. Etlinger
; Institute "Ruđer Bošković", Zagreb
N. B. Urli
; Institute "Ruđer Bošković", Zagreb
U. Spoglia
; Institute "Ruđer Bošković", Zagreb
Sažetak
Phosphorous ions with energy of 40 keV were implanted in p-type silicon at the room temperature in the (111) direction. Low fluences of 1012 and 1013 ions/cm2 were used. The temperature dependence of the Hall coefficient and sheet resistivity measurements, together with layer removal technique, were made on van der Pauw geometry of „mesa“ structure samples after annealing at higher temperatures starting from 250°C. A shallow phosphorous donor level (Ec - 0.044 eV) has been found in the highly compensated samples annealed at 450°C. At the higher temperatures (550°C, 650°C) two deeper localized energy levels: Ec - 0.2 eV and Ec - 0.42 eV were determined and associated with multiple vacancy-phosphorous complexes. It has been found that degeneracy in the samples does not occur for the above experimental conditions.
Ključne riječi
Hrčak ID:
327901
URI
Datum izdavanja:
2.8.1977.
Posjeta: 400 *