Izvorni znanstveni članak
On the modification of the Einstein relation in degenerate semiconductors in the presence of crossed electric and magnetic fields
Manabendra Mondal
; Department of Physics, University College of Science and Technology, 92 Acharya Prafulla Chandra Road, Calcutta-700009, India
Kamakhya P. Ghatak
; Department of Physics, University College of Science and Technology, 92 Acharya Prafulla Chandra Road, Calcutta-700009, India
Sažetak
An attempt is made to derive the modified form of the Einstein relation for the diffusivity-mobility ratio of the carriers in degenerate semiconductors in the presence of crossed electric and magnetic fields. It is found, taking n-GaAs as an example for the purpose of numerical computations, that such ratio shows an oscillatory magnetic field dependence as expected only under degenerate conditions and remains unaffected otherwise. Besides, the amplitude of oscillations is found to be significantly influenced by the electric field.
Ključne riječi
Hrčak ID:
331126
URI
Datum izdavanja:
2.7.1986.
Posjeta: 351 *