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Anomalous properties of n-InSe/n-ZnTe (thin film) heterojunction*

Natko Urli ; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Mirjana Peršin ; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Stanko Popović ; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Mladen Kranjčec ; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia
Branko Pivac ; “Ruđer Bošković” Institute, 41000 Zagreb, Yugoslavia

Sažetak

D. C. current-voltage characteristics of the n-InSe/p-ZnTe heterojunction have been measured in the dark at different temperatures. The model of long-time relaxation and frozen conductivity has been applied in order to explain the anomalous behaviour of forward bias current as a function of temperature.

Ključne riječi

Hrčak ID:

331183

URI

https://hrcak.srce.hr/331183

Datum izdavanja:

6.4.1987.

Podaci na drugim jezicima: hrvatski

Posjeta: 370 *