Izvorni znanstveni članak

https://doi.org/10.5562/cca1971

Micro and Nano Structure of Electrochemically Etched Silicon Epitaxial Wafers

Ozren Gamulin ; University of Zagreb, School of Medicine, Department of Physics and Biophysics, Šalata 3b, 10 000, Zagreb, Croatia
Maja Balarin ; University of Zagreb, School of Medicine, Department of Physics and Biophysics, Šalata 3b, 10 000, Zagreb, Croatia
Mile Ivanda ; Ruđer Bošković Institute, Division of Materials Physics, Bijenička 54, 10 000 Zagreb, Croatia
Marin Kosović ; University of Zagreb, School of Medicine, Department of Physics and Biophysics, Šalata 3b, 10 000, Zagreb, Croatia
Vedran Đerek ; Ruđer Bošković Institute, Division of Materials Physics, Bijenička 54, 10 000 Zagreb, Croatia
Lara Mikac ; Ruđer Bošković Institute, Division of Materials Physics, Bijenička 54, 10 000 Zagreb, Croatia
Kristina Serec ; University of Zagreb, School of Medicine, Department of Physics and Biophysics, Šalata 3b, 10 000, Zagreb, Croatia
Krešimir Furić ; Ruđer Bošković Institute, Division of Materials Physics, Bijenička 54, 10 000 Zagreb, Croatia
Davor Ristić ; Ruđer Bošković Institute, Division of Materials Physics, Bijenička 54, 10 000 Zagreb, Croatia
Dubravka Krilov ; University of Zagreb, School of Medicine, Department of Physics and Biophysics, Šalata 3b, 10 000, Zagreb, Croatia

Sažetak

Silicon epitaxial wafers, consisting of 280 μm thick n-type substrate layer and 4–5 μm thick epitaxial layer, were electrochemically etched in hydrofluoric acid ethanol solution, to produce porous silicon samples. The resistivity of epitaxial layer was 1 Ω cm, while the substrate was much better conductor with resistivity 0.015 Ω cm. By varying the etching time, the micro- and nano-pores of different sizes were obtained within the epitaxial layer, and on the substrate surface. Due to the lateral etching the epitaxial layer was partially detached from the substrate and could be peeled off. The influence of etching time duration on the optical and structural properties of porous samples was investigated by Raman, infrared and photoluminescence spectroscopy. The samples were analysed immediately after the etching and six months later, while being stored in ambient air. The Raman spectra showed the shift in positions of transversal optical (TO) phonon bands, between freshly etched samples and the one stored in ambient air. Infrared spectra indicated the presence of SiHx species in the freshly etched samples, and appearance of oxidation after prolonged storage. Photoluminescence spectra were very weak in freshly etched samples, but their intensity has increased substantially in six month period. (doi: 10.5562/cca1971)

Ključne riječi

nano materials; silicon; electrochemistry; raman; infrared

Hrčak ID:

80444

URI

https://hrcak.srce.hr/80444

Datum izdavanja:

30.4.2012.

Posjeta: 2.091 *