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https://doi.org/10.2498/cit.1001141

Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques

Lubomir Hruškovič
Martin Grabner
Josef Dobeš

Puni tekst: engleski, pdf (447 KB) str. 331-338 preuzimanja: 672* citiraj
APA 6th Edition
Hruškovič, L., Grabner, M. i Dobeš, J. (2007). Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques. Journal of computing and information technology, 15 (4), 331-338. https://doi.org/10.2498/cit.1001141
MLA 8th Edition
Hruškovič, Lubomir, et al. "Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques." Journal of computing and information technology, vol. 15, br. 4, 2007, str. 331-338. https://doi.org/10.2498/cit.1001141. Citirano 21.07.2019.
Chicago 17th Edition
Hruškovič, Lubomir, Martin Grabner i Josef Dobeš. "Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques." Journal of computing and information technology 15, br. 4 (2007): 331-338. https://doi.org/10.2498/cit.1001141
Harvard
Hruškovič, L., Grabner, M., i Dobeš, J. (2007). 'Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques', Journal of computing and information technology, 15(4), str. 331-338. https://doi.org/10.2498/cit.1001141
Vancouver
Hruškovič L, Grabner M, Dobeš J. Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques. Journal of computing and information technology [Internet]. 2007 [pristupljeno 21.07.2019.];15(4):331-338. https://doi.org/10.2498/cit.1001141
IEEE
L. Hruškovič, M. Grabner i J. Dobeš, "Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques", Journal of computing and information technology, vol.15, br. 4, str. 331-338, 2007. [Online]. https://doi.org/10.2498/cit.1001141

Sažetak
The optimization is an indispensable tool for extracting the parameters of any complicated models. Hence, advanced optimization techniques are also necessary for identifying the model parameters of semiconductor devices because their current models are very sophisticated (especially the BJT and MOSFET ones). The equations of such models contain typically one hundred parameters. Therefore, the measurement and particularly identification of the full set of the model parameters is very difficult. In the paper, an optimization method is presented which is applicable for the identifications of very complicated models using a relatively small number of iterations. The algorithm has been implemented into the original software tool C.I.A. (Circuit Interactive Analyzer) to its static and dynamic analysis modes. Therefore, the optimization is able to identify both direct-current and capacitance models of semiconductor devices. The process is demonstrated with various transistors.

Hrčak ID: 44614

URI
https://hrcak.srce.hr/44614

Posjeta: 772 *