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Avalanche Breakdown on a Semiconductor n-type Gallium Arsenide Electrode

A. Wolkenberg ; Institute of Electron Technology, Warsaw, Poland

Puni tekst: engleski pdf 7.050 Kb

str. 53-60

preuzimanja: 98



Measurements of the avalanche breakdown potential on n-type
gallium arsenide electrodes in contact with water or aqueous
solutions of NaN03 and NaCl are reported. Calculations are presented
of the dielectric constant and of field strength in the
Helmholtz and the space charge layer of the semiconductor.
The interfacial electrode capacitance of the GaAs electrode is · a
complicated function but can successfully be approximated with the
equation describing the capacitance of the p-n junction in the
solid state.

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