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A Monte-Carlo computer simulation method of continuous network models of amorphus germanium thin films

Corneliu Ioan Stanescu ; University of Bucharest, Faculty of Chemistry, Physics Department, 13 Carol Boulv., Bucharest 70346, Romania


Puni tekst: engleski pdf 56 Kb

str. 177-186

preuzimanja: 34

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Sažetak

A practical computer simulation of the network models of amorphous semiconductors, using the Monte-Carlo method, has been developed. A randomly chosen atom of the structure is slightly displaced by a random amount and in a random direction. After each move, the potential energy of the amorphous structure is calculated, and the new position is retained in the case of decrease of energy. The iterative procedure was stopped when the energy did not decrease any more. The model is tested by the radial distribution functions before and after the computation and compared to the experimental data from X-ray diffraction.

Ključne riječi

network model of amorphous semiconductor; computer simulation; Monte-Carlo method; displacements in random directions and of random amplitudes; energy minimization

Hrčak ID:

300887

URI

https://hrcak.srce.hr/300887

Datum izdavanja:

1.10.1998.

Podaci na drugim jezicima: hrvatski

Posjeta: 204 *