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Magneto-optical properties of the alloy system In1-xGaxP

M. S. Omar ; Department of Physics, College of Science, University of Salahaddin, Arbil,Iraqi Kurdistan, Iraq
S. O. Yousif ; Department of Physics, College of Education, University of Dohuk, Dohuk, Iraqi Kurdistan, Iraq

Puni tekst: engleski pdf 232 Kb

str. 165-172

preuzimanja: 36



The room-temperature dependence on composition of the energy gap is measured for the ternary alloy system In1−xGaxP semiconductors. The cross-over point from the direct to indirect optical transition energy gap is found at x = 0.718. An empirical relation for the alloy system energy-gap dependence is found for both direct and indirect transition regions. From the empirical relations belonging to the direct region transition, the values of the expected indirect energy transition at Γc1 are calculated. The difference between these values and the corresponding indirect energy (Γc1−Xc1) are also calculated. The change of Eg due to the effects of magnetic field up to 1.6 T (Tesla) was also measured. The magnetic coefficient is found to be between 3.33×10−7 and 3.87×10−7 eV/T for x = 0.31 to x = 1. A clear deviation of the magnetic coefficient occurred for the change from the direct-region to that of the indirect-region transition.

Ključne riječi

III-V semiconductors; In1−xGaxP; optical properties; magneto-optical properties

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