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Formation and rectifying properties of a barrier at contact
Puni tekst: engleski pdf 7.587 Kb
str. 41-55
preuzimanja: 6
citiraj
APA 6th Edition
(1972). Formation and rectifying properties of a barrier at contact. Fizika, 4 (1), 41-55. Preuzeto s https://hrcak.srce.hr/321681
MLA 8th Edition
"Formation and rectifying properties of a barrier at contact." Fizika, vol. 4, br. 1, 1972, str. 41-55. https://hrcak.srce.hr/321681. Citirano 21.11.2024.
Chicago 17th Edition
"Formation and rectifying properties of a barrier at contact." Fizika 4, br. 1 (1972): 41-55. https://hrcak.srce.hr/321681
Harvard
(1972). 'Formation and rectifying properties of a barrier at contact', Fizika, 4(1), str. 41-55. Preuzeto s: https://hrcak.srce.hr/321681 (Datum pristupa: 21.11.2024.)
Vancouver
Formation and rectifying properties of a barrier at contact. Fizika [Internet]. 1972 [pristupljeno 21.11.2024.];4(1):41-55. Dostupno na: https://hrcak.srce.hr/321681
IEEE
"Formation and rectifying properties of a barrier at contact", Fizika, vol.4, br. 1, str. 41-55, 1972. [Online]. Dostupno na: https://hrcak.srce.hr/321681. [Citirano: 21.11.2024.]
Sažetak
The rectifying propertics of a diode made from a cupric selenide sample in contact with magnesium were examined under low frequency A. C. conditions. The observed time dependence of the current through the diode and its current-voltage characteristic were explained considering CuSe and Mg as components of a tamishing reaction under the electric field. As a result of this reaction, a Jayer of highly resistive magnesium selenide appeared. The change of its thickness led to rectification. Derived equations describe the experimental facts with satisfactory agreement. The ionic conductivity of MgSe was found to be 2.3 · 10^-6 Ω^-1 cm^-1 at room temperature.
Ključne riječi
Hrčak ID:
321681
URI
https://hrcak.srce.hr/321681
Datum izdavanja:
2.2.1972.
Podaci na drugim jezicima:
hrvatski
Posjeta: 26
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