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Annealing of thermal defects in p-type germanium

V. Spirić ; Institute of nuclear sciences “Boris Kidrič”, Beograd
M. Stojić ; Institute of nuclear sciences “Boris Kidrič”, Beograd
D. Kostoski ; Institute of nuclear sciences “Boris Kidrič”, Beograd

Sažetak

The thermal defects in quenched p-type Ge by isochronal and isothermal annealing were studied. Only one annealing stage in the temperature range from 650 to 700 K was discovered. This indicates the high stability of thermal defects. The annealing rate constant which does not depend on the dislocation density at the higher dislocation densities is given by 5.5 · 10^13 exp (- 2.30 eV/kT) s^-1. The annealing process is well represented by first order kinetics. In the interpretation of experimental results the thermal defects were taken to be divacancies. Thus, the activation energy of (2.30 ± ± 0.10) eV was explained as the dissociation energy of divacancy. If the migration energy of single-vacancy of 0.2 eV is correct, then the binding energy of divacancy in p-type Ge is (2.10 ± 0.10) eV.

Ključne riječi

Hrčak ID:

321886

URI

https://hrcak.srce.hr/321886

Datum izdavanja:

8.5.1973.

Podaci na drugim jezicima: srpski

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