Original scientific paper
In situ electrical and optical observation of Ti thin film oxidation
Stjepan Lugomer
; Electrotechnical faculty, 78000 Banja Luka, Yugoslavia
Mladen Stipančić
; Electrotechnical faculty, 78000 Banja Luka, Yugoslavia
Abstract
High temperature Ti thin film oxidation was studied in the intermediate interval between logarithmic and parabolic oxidation kinetics. A gradual increase of the logarithmic oxidation rate, instead of the expected gradual transition from logarithmic to parabolic kinetics, was observed. The contribution of the parabolic oxidation kinetics was found to be constant, and insensitive to the thermal treatment. The study was done on the basis of simultaneous „IN SITU“ electric resistivity and multiple beam interferometry (MBI) reflection measurements. Transmission microscopy (TEM) and Auger Electron Spectroscopy (AES) depth profiles studies have shown that the homogenous TiO2 rutile structure was invariant to the kinetics variation. MBI reflection curves, fitted on the basis of the model of semitransparent film predicted amplitude convergence to the bulk reflection value and phase divergence with increasing film thickness. Amplitude fitting better than 85% and phase fitting better than 95% were obtained. The extinction coefficient β for TiO2 rutile, at λ = 632.8 nm (He-Ne laser), was found to be 3.6 · 104 cm-1.
Keywords
Hrčak ID:
328930
URI
Publication date:
5.12.1983.
Visits: 362 *