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Determination of gain and loss parameters of (AlGa)As-GaAs single heterostructure lasers

Zakria Arif ; Department of Physics, Bahauddin Zakariya University, Multan, Pakistan
Najmul H. Khan ; Department of Physics, Bahauddin Zakariya University, Multan, Pakistan
Muhammad S. Zafar ; Department of Physics, Punjab University, Lahore-20, Pakistan


Puni tekst: engleski pdf 3.138 Kb

str. 19-25

preuzimanja: 87

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Sažetak

Gain and loss parameters of (AlGa) As-GaAs single heterostructure laser have been determined by changing the reflectivity of one facet of the laser with ZnS optical films evaporated in controlled steps. The measurements gave a linear dependence of gain on threshold current density. The results so obtained on the lasing photon energy and threshold current density were in agreement with the previously reported theoretical models derived on the assumption of high concentration of impurity band tail states.

Ključne riječi

Hrčak ID:

329266

URI

https://hrcak.srce.hr/329266

Datum izdavanja:

7.1.1985.

Podaci na drugim jezicima: hrvatski

Posjeta: 309 *