Original scientific paper

On the thermoelectric power in n-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a classically large magnetic field

Kamakhya P. Ghatak ; Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vydiaratna Lane, Calcutta-700 009, India
Nalinakshya Chattopadhyay ; Department of Physics, University College of Science and Technology 92, A. P. C. Road, Calcutta-700 009, India
Manabendra Mondal ; Department of Physics, University College of Science and Technology 92, A. P. C. Road, Calcutta-700 009, India

Abstract

An attempt is made to study the thermoelectric power of the carriers in n-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a classically large magnetic field under both weak and strong electric field limits, taking n-channel inversion layers on CdGeAs2 as an example. It is found, on the basis of newly derived 2D E – k2 dispersion relations of the conduction electrons for both the limits by considering the various types of anisotropies in the energy band, that the same powers increase with decreasing surface electric fields for both the limits and the theoretical expressions are in qualitative agreement with the experimental results.

Keywords

Hrčak ID:

331430

URI

https://hrcak.srce.hr/331430

Publication date:

5.4.1988.

Article data in other languages: croatian

Visits: 345 *