Letter to the Editor
The photoexcitation spectra and excitation transfer from N to NN1 in GaP-N
Mohamed Mounir
; Department of Physics, Faculty of Science, Cairo University, Egypt
Abstract
The GaP-N crystals were grown by vapour phase epitaxy. There is an energy shift between the nitrogen bound exciton luminescence and its excitation spectrum at 30 K. The main transfer mechanism of excitons from N to NN1 at low rates of excitation in temperature > 35 K was due to thermal ionization. The value of binding energy of electron and hole was determined.
Keywords
Hrčak ID:
331432
URI
Publication date:
5.4.1988.
Visits: 352 *