Izvorni znanstveni članak

Nanoclustering in Silicon Induced by Oxygen Ions Implanted

D. Manno ; Department of Materials Science, University of Salento, Italy
A. Serra ; Department of Materials Science, University of Salento, Italy
E. Filippo ; Department of Materials Science, University of Salento, Italy
M. Rossi ; Department of Base and Applied Science for Engineering, University “La Sapienza”, Ital
G. Quarta ; Department of Innovation Engineering, University of Salento, Italy
L. Maruccio ; Department of Innovation Engineering, University of Salento, Italy
L. Calcagnil ; Department of Innovation Engineering, University of Salento, Italy

Sažetak

We report about the nanoclustering induced by
oxygen‐implantation in silicon. A tandem‐type
accelerator, with a maximum acceleration voltage of 3
MV, equipped with a sputtering ion source suitable for
the production of high current ion beams by sputtering of
solid cathodes has been used.  
The surface modifications and the structure of
nanoclusters are investigated. The topographic images,
obtained by scanning tunnelling microscope showed that
the surface is covered with a dense array of tetragonal
nanostructures oriented with respect to the substrate.
Raman spectroscopy data allowed us to estimate an
average cluster size of about 50 nm. Resistivity and Hall
effect measurements evidenced that the electron transport
in the implanted silicon samples is affected by the
nanoclusters array and it could be explained by thermally
activated hopping between localized states

Ključne riječi

Electrical transport; Hall effect; STM; Nanostructures

Hrčak ID:

76914

URI

https://hrcak.srce.hr/76914

Datum izdavanja:

15.9.2011.

Posjeta: 846 *