Original scientific paper
A Monte-Carlo computer simulation method of continuous network models of amorphus germanium thin films
Corneliu Ioan Stanescu
; University of Bucharest, Faculty of Chemistry, Physics Department, 13 Carol Boulv., Bucharest 70346, Romania
Abstract
A practical computer simulation of the network models of amorphous semiconductors, using the Monte-Carlo method, has been developed. A randomly chosen atom of the structure is slightly displaced by a random amount and in a random direction. After each move, the potential energy of the amorphous structure is calculated, and the new position is retained in the case of decrease of energy. The iterative procedure was stopped when the energy did not decrease any more. The model is tested by the radial distribution functions before and after the computation and compared to the experimental data from X-ray diffraction.
Keywords
network model of amorphous semiconductor; computer simulation; Monte-Carlo method; displacements in random directions and of random amplitudes; energy minimization
Hrčak ID:
300887
URI
Publication date:
1.10.1998.
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