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Polar interface optical oscillation and Fröhlich electron-phonon interaction Hamiltonians in a n-layer coupling quantum well

Li Zhang ; Department of Mechanism and Electron, Panyu Polytechnic, Panyu 511483, P. R. China
Hong-Jing Xie ; Department of Physics, Guihuagang Campus, Guangzhou University, Guangzhou 510405, P. R. China


Puni tekst: engleski pdf 311 Kb

str. 41-54

preuzimanja: 31

citiraj


Sažetak

Under dielectric continuum approximation and by using determinant method, the interface optical (IO) phonon modes, the orthogonal relation for polarization vector and electron - IO phonon Fröhlich interaction Hamiltonian in a n-layer coupling quantum well have been derived. Numerical calculations on seven-layer AlxGa1-xAs/GaAs systems have been performed. The IO phonon dispersion relation and the electron - IO phonon coupling function are discussed. Based on the numerical results in this and previous work, general characteristics of the IO phonon modes in a n-layer coupling quantum well system are deduced. The present investigations can be regarded as a generalization of previous studies.

Ključne riječi

multi-layer coupling quantum well; seven-layer AlxGa1-xAs/GaAs systems; interface optical phonon modes and dispersion relation

Hrčak ID:

301634

URI

https://hrcak.srce.hr/301634

Datum izdavanja:

1.3.2003.

Podaci na drugim jezicima: hrvatski

Posjeta: 177 *