Izvorni znanstveni članak
The effect of manganese on electrical properties of Hg1-xMnxSe
Borko Stošić
; Boris Kidrič Institute of Nuclear Sciences, P. O. Box 522, 11000. Belgrade, Yugoslavia
Miodrag Stojić
; Boris Kidrič Institute of Nuclear Sciences, P. 0. Box 522, 11000. Belgrade, Yugoslavia
Branka Babić-Stojić
; Boris Kidrič Institute of Nuclear Sciences, P. 0. Box 522, 11000. Belgrade, Yugoslavia
Olga Žižić
; Faculty of Mechanical Engineering, 11000 Belgrade, Yugoslavia
Sažetak
Electrical resistivity and Hall effect measurements have been performed on the Hg1-xMnxSe mixed crystals with manganese concentration x = 0.09, 0.11, 0.15 and 0.18 in the temperature range 77-300 K. It was established that the electrical resistivity is an increasing function of temperature and the free carrier concentration, of the order 1017 cm-3, is almost temperature independent in all the crystals investigated. The two scattering mechanisms, the spin scattering and phonon scattering, dominate the transport properties of the system and both are dependent on manganese concentration and temperature.
Ključne riječi
Hrčak ID:
329998
URI
Datum izdavanja:
7.1.1986.
Posjeta: 429 *