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Theoretical analysis of the gate capacitance of MOS structures of Si having p-channel inversion layers under strong magnetic quantization
Kamakhya P. Ghatak
; Centre of Advanced Study in Radio Physics and Electronics, 1, Girish Vidyaratna Lane, Calcutta - 700 009, lndia
Nalinaksha Chattopadhyay
; Department of Physics, University College of Science and Technology, 12, Acharya Prafulla Chandra Road, Calcutta - 700 001, lndia
Sažetak
An attempt is made to investigate theoretically the gate capacitance of MOS structures of Si having p-channel inversion layers in the presence of a quantizing magnetic field under weak electric field limit by formulating the appropriate modified 2D energy spectra of heavy, light and split-off holes, respectively. It is found that the gate capacitance exhibits spiky oscillations with changing magnetic field. This is in qualitative agreement with the experimental observations reported elsewhere for n-channel inversion layers on Si. It is further observed that the sharpness of the spikes increase with increasing magnetic field whereas the depths are found to decrease with increasing thickness of the insulating layer.
Ključne riječi
Hrčak ID:
331197
URI
Datum izdavanja:
7.7.1987.
Posjeta: 857 *