Original scientific paper
Theoretical analysis of the thermoelectric power in n-channel inversion layers of ternary semiconductors in the presence of a quantizing magnetic field
Manabendra Mondal
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India
S. Bhattacharya
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India
Kamakhya P. Ghatak
; Department of Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India
Abstract
An attempt is made to study the thermoelectric power of the electrons in n-channel inversion layers on ternary semiconductors under magnetic quantization, without any approximations of weak or strong electric field limits, on the basis of fourth order in effective mass theory and taking into account the interactions of the conduction, light-hole, heavy-hole and split-off bands. It is found, taking n-channel inversion layers on n-Hg1-xCdxTe as an example, that the thermoelectric power decreases with increasing surface electric field and decreasing magnetic field, respectively, in an oscillatory manner. The band non-parabolicity significantly enhances the same power in both the cases.
Keywords
Hrčak ID:
331429
URI
Publication date:
5.4.1988.
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