Izvorni znanstveni članak
On the thermoelectric power in n-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a classically large magnetic field
Kamakhya P. Ghatak
; Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vydiaratna Lane, Calcutta-700 009, India
Nalinakshya Chattopadhyay
; Department of Physics, University College of Science and Technology 92, A. P. C. Road, Calcutta-700 009, India
Manabendra Mondal
; Department of Physics, University College of Science and Technology 92, A. P. C. Road, Calcutta-700 009, India
Sažetak
An attempt is made to study the thermoelectric power of the carriers in n-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a classically large magnetic field under both weak and strong electric field limits, taking n-channel inversion layers on CdGeAs2 as an example. It is found, on the basis of newly derived 2D E – k2 dispersion relations of the conduction electrons for both the limits by considering the various types of anisotropies in the energy band, that the same powers increase with decreasing surface electric fields for both the limits and the theoretical expressions are in qualitative agreement with the experimental results.
Ključne riječi
Hrčak ID:
331430
URI
Datum izdavanja:
5.4.1988.
Posjeta: 345 *