Meeting abstract
The influence of radiation on the lattice defects in p-type GaAs
H. Šimić
; Institute of Physics, Faculty of Science, University of Sarajevo, Yugoslavia
S. Marić
; Institute of Physics, Faculty of Science, University of Sarajevo, Yugoslavia
M. Stoljić
; The Boris Kidrič Institute of Nuclear Sciences, Vinča, Belgrade, Yugoslavia
Abstract
The radiation defects in p-type GaAs single crystals, Cd-doped, with the free carrier concentrations, 10¹⁶ cm⁻³, were studied. The defects were induced by x-rays, 4 MeV maximum energy, and by Co⁶⁰ gamma rays. The radiation of 10²¹ photon/cm² induces defects which behave as acceptors in 10¹⁶ cm⁻³ concentration. These defects anneal out via the two stages in temperature regions (300–400)°C and (460–520)°C, with the activation energies of 1 eV and 1.5 eV, respectively, determined by “variable temperature” method.
Keywords
Hrčak ID:
339952
URI
Publication date:
20.12.1989.
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