Original scientific paper
Effect of Dopants on Epitaxial Growth of Silicon Nanowires
Sung Hwan Chung
; School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
Sarath Ramadurgam
; Department of Physics, Purdue University, West Lafayette, IN, USA
Chen Yang
; Department of Physics, Purdue University, West Lafayette, IN, USA; Department of Physics, Purdue University, West Lafayette, IN, USA
Abstract
We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical <111> direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical <111> direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.
Keywords
nanowires; epitaxial growth; dopant
Hrčak ID:
142594
URI
Publication date:
1.1.2014.
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