Original scientific paper
Formation and rectifying properties of a barrier at contact
Full text: english pdf 7.587 Kb
page 41-55
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cite
APA 6th Edition
(1972). Formation and rectifying properties of a barrier at contact. Fizika, 4 (1), 41-55. Retrieved from https://hrcak.srce.hr/321681
MLA 8th Edition
"Formation and rectifying properties of a barrier at contact." Fizika, vol. 4, no. 1, 1972, pp. 41-55. https://hrcak.srce.hr/321681. Accessed 24 Nov. 2024.
Chicago 17th Edition
"Formation and rectifying properties of a barrier at contact." Fizika 4, no. 1 (1972): 41-55. https://hrcak.srce.hr/321681
Harvard
(1972). 'Formation and rectifying properties of a barrier at contact', Fizika, 4(1), pp. 41-55. Available at: https://hrcak.srce.hr/321681 (Accessed 24 November 2024)
Vancouver
Formation and rectifying properties of a barrier at contact. Fizika [Internet]. 1972 [cited 2024 November 24];4(1):41-55. Available from: https://hrcak.srce.hr/321681
IEEE
"Formation and rectifying properties of a barrier at contact", Fizika, vol.4, no. 1, pp. 41-55, 1972. [Online]. Available: https://hrcak.srce.hr/321681. [Accessed: 24 November 2024]
Abstract
The rectifying propertics of a diode made from a cupric selenide sample in contact with magnesium were examined under low frequency A. C. conditions. The observed time dependence of the current through the diode and its current-voltage characteristic were explained considering CuSe and Mg as components of a tamishing reaction under the electric field. As a result of this reaction, a Jayer of highly resistive magnesium selenide appeared. The change of its thickness led to rectification. Derived equations describe the experimental facts with satisfactory agreement. The ionic conductivity of MgSe was found to be 2.3 · 10^-6 Ω^-1 cm^-1 at room temperature.
Keywords
Hrčak ID:
321681
URI
https://hrcak.srce.hr/321681
Publication date:
2.2.1972.
Article data in other languages:
croatian
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