Meeting abstract
Influence of temperature and defects induced by gamma rays on the transport properties of Hg₁₋ₓMnₓSe
B. Babić Stojić
; “Boris Kidrič” Institute of Nuclear Sciences, Belgrade
M. Stojić
; “Boris Kidrič” Institute of Nuclear Sciences, Belgrade
Abstract
Electrical resistivity and Hall effect measurements have been performed on Hg₁₋ₓMnₓSe crystal with manganese concentration x = 0.09 in the temperature range 19 K ≤ T ≤ 44 K. It was established that the electrical resistivity of this semimagnetic semiconductor increases with increasing temperature. However, the resistivity exhibits a minimum about 20 K. The Hall resistivity is a linear function of applied magnetic field (H ≤ 0.7 T) and depends on temperature mainly through the magnetic susceptibility. The conduction electron concentration, determined from the low-temperature Hall data, n = 8.7×10¹⁷ cm⁻³, is only slightly lower than the room-temperature value, n = 9×10¹⁷ cm⁻³. The same crystal was exposed to ⁶⁰Co gamma irradiation at 300 K. A dose of 70 kGy has reduced the conduction electron concentration by about 2.6 times.
Keywords
Hrčak ID:
339934
URI
Publication date:
20.12.1989.
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