Meeting abstract
Influence of silicon concentration and heat treatment on electronic properties of pyrocarbon
S. Dimitrijević
; Boris Kidrič Institute of Nuclear Sciences – Vinča, Materials Science Department, P.O. Box 522, 11001 Beograd
S. Marinković
; Boris Kidrič Institute of Nuclear Sciences – Vinča, Materials Science Department, P.O. Box 522, 11001 Beograd
Abstract
Temperature dependence of diamagnetic susceptibilities of pure and silicon-containing pyrolytic carbon deposited at 1900 K and 13.3 kPa total pressure have been investigated in order to estimate the Fermi level position and its variations with silicon concentration and heat treatment temperature.
The obtained results suggest that heat treatment causes the lifting of the Fermi level of pyrocarbon, as a consequence of graphitisation. The same effect takes place in presence of silicon and increases with its concentration. The presence of silicon also enhances the lifting of the Fermi level caused by heat treatment.
Keywords
Hrčak ID:
340959
URI
Publication date:
15.12.1980.
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