Original scientific paper

Modified two-dimensional analytical model for current-voltage and breakdown voltage characteristics of GaAs MESFET planar structure

Rifat Ramović ; Faculty of Electrical Engineering, Bulevar Revolucije 73, 11120 Belgrade, Yugoslavia
Robert Andrin ; "Telekom Srbija" a.d., Department of Mobile Communications, Takovska 2, 11000 Belgrade, Yugoslavia

Abstract

We present an analytical approach for modelling the planar structure of GaAs MESFET's with the aim to determine current-voltage characteristics and breakdown voltage for reverse gate-drain bias. With the two-dimensional analytic solutions, we can determine the electric potential and field, and carrier and velocity profiles in the device. The results of simulation are compared with the available experimental data.

Keywords

planar MESFET structure; two-dimensional solution; electric potential and field; currentvoltage characteristics; breakdown voltage

Hrčak ID:

300881

URI

https://hrcak.srce.hr/300881

Publication date:

1.7.1998.

Article data in other languages: croatian

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