Izvorni znanstveni članak
Electronic properties of hydrogen-doped (Zr803d20)1-xHx (3d = Fe, Co, Ni) metallic glasses
Ivan Kokanović
; Department of Physics, Faculty of Science, University of Zagreb, Zagreb, Croatia
Jagoda Lukatela
; Institute of Physics, P. O. Box 304, Zagreb, Croatia
Sažetak
The electrical resistivities of hydrogen-doped (Zr803d20)1-xHx (3d = Fe, Co, Ni; x Ł 0.11) metallic glasses have been measured at temperatures between 2 K and 290 K. The increase of the room-temperature resistivity and its temperature coefficient are explained as a consequence of increased disorder due to hydrogen-doping. The temperature dependence of the resistivity has been analysed using theoretical models of weak-localisation and electron-electron interaction in disordered three-dimensional conductors. The hydrogen dopant is found to reduce effective electron diffusion constant, D, the spin-orbit scattering rate, τ so-1, the superconducting transition temperature, Tc, and broadens the superconducting transition region. We discuss the effects of different hydrogen environments on Tc of (Zr803d20)1-xHx metallic glasses.
Ključne riječi
electrical resistivity; metallic glasses; (Zr803d20)1−xHx (3d = Fe; Co; Ni; x ≤ 0.11); hydrogen-doped; disordered three-dimensional conductors; electron diffusion constant; spin-orbit scattering; superconducting transition temperature
Hrčak ID:
300964
URI
Datum izdavanja:
1.7.1999.
Posjeta: 636 *