Izvorni znanstveni članak
Trimer barrier hight effect oh the nature of the electronic state of the superlatice GaAs/AlxGa1-xAs
R. Djelti
; Département de physique, Faculté des sciences, Université Abdelhamid Ibn badis, BP 227 Mostaganem, Algérie
S. Bentata
; Département de physique, Faculté des sciences, Université Abdelhamid Ibn badis, BP 227 Mostaganem, Algérie
Z. Aziz
; Département de physique, Faculté des sciences, Université Abdelhamid Ibn badis, BP 227 Mostaganem, Algérie
Sažetak
By the formalism of transfer matrix, transmission coefficient and localization length are studied in the case of a superlattice containing semiconductor in barrier height trimer (HBT). We are interested in the GaAs/AlxGa1-xAs layers, having identical thickness, where the aluminium concentration x takes at random two different values, with the constraint that one of them appears only triply, i.e. it is a random trimer barrier (RTB). The electronic states of SR were studied by theoretical calculation of transmission coefficient of the miniband structure. We observed that the process of delocalization exists when the disorder is correlated, the result confirming the theoretical studies already found for the case of the dimer.
Ključne riječi
superlattices; transmission coefficient; trimer in height of barrier delocalized state
Hrčak ID:
302137
URI
Datum izdavanja:
1.10.2006.
Posjeta: 222 *